t4 - lds -0 302 -1, rev. 1 ( 6/ 13 /13 ) ?201 3 microsemi corporation page 1 of 6 1n6675 ur -1 C 1n6677 ur -1 plus cdll0.5a20 C cdll0.5a40 available on commercial versions 200 and 500 ma schottky barrier rectifier qualified per mil - prf - 19500/ 610 qualified levels * : jan, jantx, jantxv and jan s description the 1n 667 5 ur - 1 thr ough 1n6677 ur - 1 series of schottky barrier rectifiers provides a selection of 200 or 500 ma ratiings in surface mount, hard glass do - 213aa melf package. the 1n6677 ur - 1 is also available in jan, jantx, jantxv, and jans military qualificatio ns . do - 213aa melf package also available in : do - 35 (do - 204ah) package ( axial - leaded ) 1n6675 -1 C 1n6677 -1 important: for the latest information, visit our website http://www.microsemi.com . features ? jedec registered 1n 6675 thr ough 1n6677 number series . ? hermetically sealed . ? m etallurgical ly bond ed . ? double plug construction. ? * jan, jantx, jantxv and jans qualification s are av ailable per mil - prf - 19500/ 610 on 1n6677 ur - 1 only . ? rohs compliant versions are available on all commercial types . applications / benefits ? leadless package for surface mounting. ? ideal for high - density situations. ? non - sensitive to esd per mil - std - 750 m et hod 1020. maximum ratings @ t a = 25 oc unless otherwise stated msc C law rence 6 lake street, lawrence, ma 01841 1- 800 - 446 - 1158 tel: (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters/test conditions symbol value unit junction temperature t j - 65 to +125 oc storage temperature t stg - 65 to +150 oc thermal resistance, junction - to - end cap r ? j ec 100 oc /w surge peak forward c urrent at 8.3 ms half - sine wave for 1n6677 ur - 1 i fsm 5 a (pk) average rectified output current: 1n6675 ur -1 C 1n6677 ur -1 (1) cdll 0.5a20 C cdll 0.5a40 i o 200 500 ma solder temperatur e @ 10 s 260 o c notes: 1. see figure 1 for derating. downloaded from: http:///
t4 - lds -0 302 -1, rev. 1 ( 6/ 13 /13 ) ?201 3 microsemi corporation page 2 of 6 1n6675 ur -1 C 1n6677 ur -1 plus cdll0.5a20 C cdll0.5a40 mechanical and packaging ? case: hermetically sealed glass case package. ? terminals: tin/lead plated or rohs compliant matte - tin (commercial grade only) over copper clad steel. solderable per mil - std - 750, method 2026. ? polarity: cathode end is banded. ? mounting: the axial coefficient of expansion (coe) of this device is approximately +6pp m/c. the coe of the mounting surface system should be selected to provide a suitable match with this device. ? marking: part number. ? tape & reel option: standard per eia - 296. consult factory for quantities. ? weight: approximately 0.04 grams. ? see p ackage d imensions on last page. part nomencl ature 1n6675 ur - 1 C 1n6677 ur - 1: 1n6675 ur -1 (e3) jedec type number (s ee electrical characteristic s t able ) melf surface mount rohs compliance e3 = rohs c ompliant blank = non - rohs c ompliant metallurg ically bonded 1n6677 ur - 1 only: jan 1n6677 ur -1 (e3) reliability level * jan = jan level jantx = jantx level jantxv = jantxv level jans = jans level jedec type number (s ee electrical characteristic s t a ble ) rohs compliance e3 = rohs c ompliant (on commercial grade only) blank = non - rohs c ompliant metallurgically bonded melf surface mount cdll 0.5a20 C cdll0.5a40: cdll 0.2a 20 (e3) microsemi designation amp rating working peak reverse voltage rating ( v rwm ) rohs compliance e3 = rohs c ompliant blank = non - rohs c ompliant downloaded from: http:///
t4 - lds -0 302 -1, rev. 1 ( 6/ 13 /13 ) ?201 3 microsemi corporation page 3 of 6 1n6675 ur -1 C 1n6677 ur -1 plus cdll0.5a20 C cdll0.5a40 symbols & definitions symbol definition c capacitance: the capacitance in pf at a frequency of 1 mhz and specified voltage. f f requency i r reverse current: the dc current flowing from the external circuit into the cathode terminal at the specified v oltage v r . i fsm surge peak forward current: the forward current including all nonrepetitive transient currents but excluding all r epetitive transients (ref jesd282-b) i o average rectified output current: the output current averaged over a full cycle with a 50 hz or 60 hz sin e - wave input and a 180 degree conduction angle. v (br) breakdown voltage: a voltage in the breakdown region. v f forward voltage: a positive dc anode - cathode voltage the device will exhibit at a specified forward current. v r reverse voltage: a positive dc cathode - anode voltage below the breakdown region. v rwm working peak reverse voltage: the peak voltage excluding all transient voltages (ref j esd282 - b). also sometimes known historically as piv. electrical characteristics @ 25 o c unless otherwise specified 200 ma options: type number (note 1) working peak reverse voltage maximum forward voltage maximum fo rward voltage maximum forward voltage maximum reverse leakage current i rm @ v r m maximum capacitance @ v r = 0 volts f = 1.0 mhz v rwm v f @ 20 ma v f @ 200 ma v f @ 630 ma t j = +25 oc t j = 100 oc c t v (pk) volts volts volts a ma pf 1n6675 ur -1 20 0.37 0.50 0.70 5.0 0.60 50 1n6676 ur -1 30 0.37 0.50 0.70 5.0 0.60 50 1n6677 ur -1 40 0.37 0.50 0.70 5.0 0.60 50 note: 1. these numbers can also be ordered as cdll6675 or c dll 0.2a20, cdll6676 or c dll 0.2a30, and cdll6677 or c dll 0.2a40. 500 ma options: type number working peak reverse voltage maximum forward voltage maximum forward voltage maximum reverse leakage current i rm @ v r m maximum capacitance @ v r = 0 volts f = 1.0 mhz v rwm v f @ 100 ma v f @ 500 ma t j = +25 oc t j = 100 oc c t v (pk) volts volts a ma pf cdll 0.5a20 20 0.50 0.65 10.0 1.0 50 cdll 0.5a30 30 0.50 0.65 10.0 1.0 50 cdll 0.5a40 40 0.50 0.65 10.0 1.0 50 downloaded from: http:///
t4 - lds -0 302 -1, rev. 1 ( 6/ 13 /13 ) ?201 3 microsemi corporation page 4 of 6 1n6675 ur -1 C 1n6677 ur -1 plus cdll0.5a20 C cdll0.5a40 graphs t ec (c) (solder points) figure 1 temperature power derating for 1n6677ur -1 notes: 1. maximum th eoretical derate design curve. this is the true inverse of the worst case thermal resistance value. all devices are capable of operating at t j specified on this curve. any parallel line to this curve will intersect the appropriate power for the desired maximum t j allowed. 2. derate design curve constrained by the maximum junction temperatures and po wer rating specified. (see maximum ratings .) 3. derate design curve chosen at t j 110 c to show power rating where most users want to limit t j in their application. s in ewave operation maximum io rating (ma) downloaded from: http:///
t4 - lds -0 302 -1, rev. 1 ( 6/ 13 /13 ) ?201 3 microsemi corporation page 5 of 6 1n6675 ur -1 C 1n6677 ur -1 plus cdll0.5a20 C cdll0.5a40 graphs time (s) figure 2 thermal impedance curve for 1n6677ur -1 theta ( c/w) downloaded from: http:///
t4 - lds -0 302 -1, rev. 1 ( 6/ 13 /13 ) ?201 3 microsemi corporation page 6 of 6 1n6675 ur -1 C 1n6677 ur -1 plus cdll0.5a20 C cdll0.5a40 package dimensions notes: 1. dimensions are in inc hes. millimeters are given for in formation only. 2. dimensions are pre - solder dip. 3. referencing to dimension s, minimum clearance of glass body to mounting surface on all or ientations. 4. in accordance with asme y14.5m, diameters are equivalent to x symbology. pad layout dim inch millimeters min max min max bd 0.063 0.067 1.60 1.70 bl 0.130 0.146 3.30 3.71 ect 0.016 0.022 0.41 0.56 s 0.001 - 0.03 - inch mm a 0.200 5.08 b 0.055 1.40 c 0.080 2.03 downloaded from: http:///
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